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发明申请
US20070093034A1 Methods of forming semiconductor constructions 审中-公开
形成半导体结构的方法

  • 专利标题： Methods of forming semiconductor constructions
  • 专利标题（中）： 形成半导体结构的方法
  • 申请号： US11606478
    申请日： 2006-11-29
  • 公开(公告)号： US20070093034A1
    公开(公告)日： 2007-04-26
  • 发明人: Cem Basceri , Garo Derderian
  • 申请人： Cem Basceri , Garo Derderian
  • 主分类号： H01L21/20
  • IPC分类号： H01L21/20
Methods of forming semiconductor constructions
摘要：
The invention includes a method of forming a semiconductor construction. A semiconductor substrate is provided, and a conductive node is formed to be supported by the semiconductor substrate. A first conductive material is formed over the conductive node and shaped as a container. The container has an opening extending therein and an upper surface proximate the opening. The container opening is at least partially filled with an insulative material. A second conductive material is formed over the at least partially filled container opening and physically against the upper surface of the container. The invention also includes semiconductor structures.
摘要（中）：

本发明包括形成半导体结构的方法。 提供半导体衬底，并且形成由半导体衬底支撑的导电节点。 第一导电材料形成在导电节点上并成形为容器。 容器具有在其中延伸的开口和靠近开口的上表面。 容器开口至少部分地填充有绝缘材料。 第二导电材料形成在至少部分填充的容器开口上并且物理地抵靠容器的上表面。 本发明还包括半导体结构。

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