发明申请
US20070093183A1 CERIUM OXIDE SLURRY, CERIUM OXIDE POLISHING SLURRY AND METHOD FOR POLISHING SUBSTRATE USING THE SAME
审中-公开
氧化铈浆料,氧化铝抛光浆料和使用其抛光底材的方法
- 专利标题: CERIUM OXIDE SLURRY, CERIUM OXIDE POLISHING SLURRY AND METHOD FOR POLISHING SUBSTRATE USING THE SAME
- 专利标题(中): 氧化铈浆料,氧化铝抛光浆料和使用其抛光底材的方法
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申请号: US11550948申请日: 2006-10-19
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公开(公告)号: US20070093183A1公开(公告)日: 2007-04-26
- 发明人: Shigeru Yoshikawa , Kazuhiro Enomoto
- 申请人: Shigeru Yoshikawa , Kazuhiro Enomoto
- 申请人地址: JP Tokyo
- 专利权人: HITACHI CHEMICAL CO., LTD.
- 当前专利权人: HITACHI CHEMICAL CO., LTD.
- 当前专利权人地址: JP Tokyo
- 优先权: JP2005-304311 20051019
- 主分类号: B24B7/30
- IPC分类号: B24B7/30
摘要:
The present invention provides a cerium oxide slurry, a cerium oxide polishing slurry, and a method of polishing a substrate by using the same, wherein decrease of scratches and polish at high speed can be realized by reducing the content of coarse grains by improving in the disperse state of cerium oxide particles. The invention relates to a cerium oxide slurry containing cerium oxide particles, dispersant and water, in which the ratio of weight of cerium oxide/weight of dispersant is in a range of 20 to 80 and relates a cerium oxide polishing slurry comprising the cerium oxide slurry and additives such as a water-soluble polymer.
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