Invention Application
- Patent Title: Surface acoustic wave device
- Patent Title (中): 表面声波装置
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Application No.: US10595237Application Date: 2004-08-06
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Publication No.: US20070096592A1Publication Date: 2007-05-03
- Inventor: Michio Kadota , Takeshi Nakao
- Applicant: Michio Kadota , Takeshi Nakao
- Priority: JP2003-346280 20031003
- International Application: PCT/JP04/11364 WO 20040806
- Main IPC: H03H9/25
- IPC: H03H9/25

Abstract:
A surface acoustic wave device includes a piezoelectric substrate made of LiNbO3 having an electromechanical coupling coefficient k whose square is at least about 0.025, at least one electrode that is made of a metal whose density is greater than that of Al or an alloy primarily including the metal or that is composed of laminated films made of a metal whose density is greater than that of Al or an alloy primarily including the metal and another metal, the electrode being disposed on the piezoelectric substrate, a first insulating layer disposed in a region other than a region where the at least one electrode is disposed, the thickness of the first insulating layer being substantially equal to that of the electrode, and a second insulating layer covering the electrode and the first insulating layer. The density of the electrode is at least about 1.5 times greater than that of the first insulating layer.
Public/Granted literature
- US07339304B2 Surface acoustic wave device Public/Granted day:2008-03-04
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