发明申请
- 专利标题： Enhanced toggle-MRAM memory device
- 专利标题（中）： 增强型切换MRAM存储设备
-
申请号： US11589676申请日： 2006-10-30
-
公开(公告)号： US20070097742A1公开(公告)日： 2007-05-03
- 发明人: Hideo Fujiwara , Sheng-Yuan Wang
- 申请人： Hideo Fujiwara , Sheng-Yuan Wang
- 主分类号： G11C11/14
- IPC分类号： G11C11/14
摘要：
A toggle-MRAM device is disclosed that uses an SAF composite and lowers the operating field substantially with a wide operating field margin and high thermal stability using specific magnetic parameters. Consequently, this device enhances the performance of MRAM's, especially in its large operating field margin and high thermal stability characteristics with a low current.
公开/授权文献
- US07569902B2 Enhanced toggle-MRAM memory device 公开/授权日：2009-08-04
信息查询
