发明申请
US20070099124A1 Composition for Removing Immersion Lithography Solution and Method for Manufacturing Semiconductor Device Including Immersion Lithography Process Using the Same
审中-公开
用于去除沉淀光刻溶液的组合物及其制造方法，包括使用其浸入光刻工艺的半导体器件
- 专利标题： Composition for Removing Immersion Lithography Solution and Method for Manufacturing Semiconductor Device Including Immersion Lithography Process Using the Same
- 专利标题（中）： 用于去除沉淀光刻溶液的组合物及其制造方法，包括使用其浸入光刻工艺的半导体器件
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申请号： US11427578申请日： 2006-06-29
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公开(公告)号： US20070099124A1公开(公告)日： 2007-05-03
- 发明人: Jae Chang Jung , Sung Lee
- 申请人： Jae Chang Jung , Sung Lee
- 申请人地址： KR Gyeonggi-do
- 专利权人： HYNIX SEMICONDUCTOR INC.
- 当前专利权人： HYNIX SEMICONDUCTOR INC.
- 当前专利权人地址： KR Gyeonggi-do
- 优先权： KR10-2005-0103080 20051031
- 主分类号： G03C5/00
- IPC分类号： G03C5/00
摘要：
Disclosed herein is a composition for removing an immersion lithography solution. The composition includes an organic solvent and an acid compound. Also disclosed is a method for manufacturing a semiconductor device including an immersion lithography process. When a photoresist pattern is formed by the immersion lithography process, an exposure process is performed on a photoresist film formed over an underlying layer with an immersion lithography exposer. Then, the composition is dripped over the wafer to remove residual immersion lithography solution on the photoresist film, thereby improving a water mark defect phenomenon.