发明申请
- 专利标题: Hydrazine-free solution deposition of chalcogenide films
- 专利标题(中): 无肼溶液沉积硫族化物膜
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申请号: US11506827申请日: 2006-08-21
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公开(公告)号: US20070099331A1公开(公告)日: 2007-05-03
- 发明人: David Mitzi , Matthew Copel
- 申请人: David Mitzi , Matthew Copel
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing additive to form a solution of a complex thereof; applying the solution of the complex onto a substrate to produce a coating of the solution on the substrate; removing the solvent from the coating to produce a film of the complex on the substrate; and thereafter annealing the film of the complex to produce a metal chalcogenide film on the substrate. Also provided is a process for preparing an isolated hydrazinium-based precursor of a metal chalcogenide as well as a thin-film field-effect transistor device using the metal chalcogenides as the channel layer.
公开/授权文献
- US07618841B2 Hydrazine-free solution deposition of chalcogenide films 公开/授权日:2009-11-17