发明申请
- 专利标题： Method for manufacturing semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US11524237申请日： 2006-09-21
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公开(公告)号： US20070099370A1公开(公告)日： 2007-05-03
- 发明人: Kazuaki Nakajima , Tomohiro Saito
- 申请人： Kazuaki Nakajima , Tomohiro Saito
- 优先权： JP2005-275996 20050922
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238
摘要：
A method for manufacturing a semiconductor device includes forming a gate insulating film on a semiconductor substrate, and forming a gate electrode comprising a metal semiconductor compound layer and having a predetermined gate length on the gate insulating film, the forming the gate electrode including forming a polycrystalline semiconductor film having an average grain diameter below a specific size depending on the predetermined gate length and including at least one of silicon and germanium, the average grain diameter of the semiconductor film being 5 nm or more and 90 nm or less, forming a metal film on the semiconductor film, and converting whole of the semiconductor film into the metal semiconductor compound layer by reacting the semiconductor film and the metal film by heat treatment.
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