发明申请
- 专利标题： Semiconductor device and manufacturing method thereof
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11583698申请日： 2006-10-20
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公开(公告)号： US20070099394A1公开(公告)日： 2007-05-03
- 发明人: Toshiyuki Morita , Takeshi Nishioka
- 申请人： Toshiyuki Morita , Takeshi Nishioka
- 优先权： JPP2005-307304 20051021
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; H01L21/461 ; H01L21/302
摘要：
A semiconductor device, has a semiconductor substrate; a first insulating film which is disposed above the semiconductor substrate; a second insulating film which is disposed above the first insulating film; a wiring which is disposed in the first insulating film and has a plug connecting part; a plug which is disposed in the second insulating film and connected to the plug connecting part; a plurality of first dummy wirings which are disposed in a first area near the plug connecting part in the first insulating film; and a plurality of second dummy wirings which are disposed in a second area near the wiring excepting the plug connecting part in the first insulating film, and have at least either a width smaller than that of the first dummy wirings or a pattern coverage ratio larger than that of the first dummy wirings.
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