发明申请
US20070103825A1 High voltage ESD circuit by using low-voltage device with substrate-trigger and gate-driven technique
有权
采用基板触发和栅极驱动技术的低压器件实现高压ESD电路
- 专利标题： High voltage ESD circuit by using low-voltage device with substrate-trigger and gate-driven technique
- 专利标题（中）： 采用基板触发和栅极驱动技术的低压器件实现高压ESD电路
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申请号： US11269620申请日： 2005-11-09
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公开(公告)号： US20070103825A1公开(公告)日： 2007-05-10
- 发明人: Ming-Dou Ker , Chien-Ming Lee
- 申请人： Ming-Dou Ker , Chien-Ming Lee
- 申请人地址： TW Hsin-Chu
- 专利权人： Silicon Integrated Systems Corp.
- 当前专利权人： Silicon Integrated Systems Corp.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H02H9/00
- IPC分类号： H02H9/00
摘要：
An ESD protection circuit is disclosed. The ESD protection circuit includes a stacked MOS circuit and a trigger current generating circuit. The trigger current generating circuit will generate trigger signal(s) to turn on the stacked MOS circuit under ESD stress condition. The ESD voltage can thus be discharged through the current path formed by the stacked MOS circuit. A lower trigger voltage is achieved by technologies disclosed, which will make an integrated circuit more sensitive to ESD.