发明申请
US20070108487A1 CMOS (COMPLEMENTARY METAL OXIDE SEMICONDUCTOR) TYPE SOLID-STATE IMAGE PICKUP DEVICE USING N/P+ SUBSTRATE IN WHICH N-TYPE SEMICONDUCTOR LAYER IS LAMINATED ON P+ TYPE SUBSTRATE MAIN BODY
有权
CMOS（补充金属氧化物半导体）类型固体状态图像拾取器件使用N + P +衬底，其中N型半导体层层合在P +型衬底上主体
- 专利标题： CMOS (COMPLEMENTARY METAL OXIDE SEMICONDUCTOR) TYPE SOLID-STATE IMAGE PICKUP DEVICE USING N/P+ SUBSTRATE IN WHICH N-TYPE SEMICONDUCTOR LAYER IS LAMINATED ON P+ TYPE SUBSTRATE MAIN BODY
- 专利标题（中）： CMOS（补充金属氧化物半导体）类型固体状态图像拾取器件使用N + P +衬底，其中N型半导体层层合在P +型衬底上主体
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申请号： US11558200申请日： 2006-11-09
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公开(公告)号： US20070108487A1公开(公告)日： 2007-05-17
- 发明人: Ikuko Inoue , Hiroshige Goto , Hirofumi Yamashita , Hisanori Ihara , Nagataka Tanaka , Tetsuya Yamaguchi
- 申请人： Ikuko Inoue , Hiroshige Goto , Hirofumi Yamashita , Hisanori Ihara , Nagataka Tanaka , Tetsuya Yamaguchi
- 优先权： JP2005-327601 20051111
- 主分类号： H01L31/113
- IPC分类号： H01L31/113
摘要：
A solid-state image pickup device includes a semiconductor substrate including a substrate main body having P-type impurities and a first N-type semiconductor layer provided on the substrate main body, an image pickup area including a plurality of photoelectric converters in which the plurality of photoelectric converters include second N-type semiconductor layers, the second N-type semiconductor layers being provided on a surface portion of the first N-type semiconductor layer independently of one another, and a first peripheral circuit area including a first P-type semiconductor layer formed on the first N-type semiconductor layer. The solid-state image pickup device further includes a second peripheral circuit area including a second P-type semiconductor layer formed on the first N-type semiconductor layer and connected to the substrate main body.
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