发明申请
- 专利标题: Memory Device Having a Duty Ratio Corrector
- 专利标题(中): 具有占空比校正器的存储器件
-
申请号: US11623927申请日: 2007-01-17
-
公开(公告)号: US20070109033A1公开(公告)日: 2007-05-17
- 发明人: Young Choi , Kwang Na
- 申请人: Young Choi , Kwang Na
- 申请人地址: KR Ichon-Shi
- 专利权人: HYNIX SEMICONDUCTOR INC.
- 当前专利权人: HYNIX SEMICONDUCTOR INC.
- 当前专利权人地址: KR Ichon-Shi
- 优先权: KR2004-27096 20040420
- 主分类号: H03K3/017
- IPC分类号: H03K3/017
摘要:
A memory device having a duty ratio corrector which can reduce power consumption by blocking current paths between output terminals and a ground terminal by applying input signals for turning off switching devices for generating an auxiliary voltage for correcting a duty ratio at an initial stage, and which can improve an operational speed by changing the auxiliary voltage from a predetermined voltage, not 0V, to a target voltage.
公开/授权文献
- US07312647B2 Memory device having a duty ratio corrector 公开/授权日:2007-12-25
信息查询
IPC分类: