发明申请
US20070109033A1 Memory Device Having a Duty Ratio Corrector 有权
具有占空比校正器的存储器件

  • 专利标题: Memory Device Having a Duty Ratio Corrector
  • 专利标题(中): 具有占空比校正器的存储器件
  • 申请号: US11623927
    申请日: 2007-01-17
  • 公开(公告)号: US20070109033A1
    公开(公告)日: 2007-05-17
  • 发明人: Young ChoiKwang Na
  • 申请人: Young ChoiKwang Na
  • 申请人地址: KR Ichon-Shi
  • 专利权人: HYNIX SEMICONDUCTOR INC.
  • 当前专利权人: HYNIX SEMICONDUCTOR INC.
  • 当前专利权人地址: KR Ichon-Shi
  • 优先权: KR2004-27096 20040420
  • 主分类号: H03K3/017
  • IPC分类号: H03K3/017
Memory Device Having a Duty Ratio Corrector
摘要:
A memory device having a duty ratio corrector which can reduce power consumption by blocking current paths between output terminals and a ground terminal by applying input signals for turning off switching devices for generating an auxiliary voltage for correcting a duty ratio at an initial stage, and which can improve an operational speed by changing the auxiliary voltage from a predetermined voltage, not 0V, to a target voltage.
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