发明申请
- 专利标题： Flash memory device and word line enable method thereof
- 专利标题（中）： 闪存装置及其字线使能方法
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申请号： US11599434申请日： 2006-11-15
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公开(公告)号： US20070109862A1公开(公告)日： 2007-05-17
- 发明人: Jin-Kook Kim , Jin-Yub Lee
- 申请人： Jin-Kook Kim , Jin-Yub Lee
- 优先权： KR2005-109999 20051117
- 主分类号： G11C11/34
- IPC分类号： G11C11/34
摘要：
In one aspect, a word line enable method in a flash memory device includes driving a signal line corresponding to a selected word line with a word line voltage, and stepwise increasing a gate voltage of a switch transistor connected between the selected word line and the signal line during a program execute period.
公开/授权文献
- US07545680B2 Flash memory device and word line enable method thereof 公开/授权日：2009-06-09
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