发明申请
- 专利标题： HIGH DENSITY MIMCAP WITH A UNIT REPEATABLE STRUCTURE
- 专利标题（中）： 具有单位重复结构的高密度MIMCAP
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申请号： US11619251申请日： 2007-01-03
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公开(公告)号： US20070111430A1公开(公告)日： 2007-05-17
- 发明人: Michael CHUDZIK , Louis HSU , Joseph SHEPARD , William TONTI
- 申请人： Michael CHUDZIK , Louis HSU , Joseph SHEPARD , William TONTI
- 申请人地址： US NY Armonk 10504
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk 10504
- 主分类号： H01L21/8242
- IPC分类号： H01L21/8242 ; H01L29/94
摘要：
A structure, apparatus and method for utilizing vertically interdigitated electrodes serves to increase the capacitor area surface while maintaining a minimal horizontal foot print. Since capacitance is proportional to the surface area the structure enables continual use of current dielectric materials such as Si3N4 at current thicknesses. In a second embodiment of the interdigitated MIMCAP structure the electrodes are formed in a spiral fashion which serves to increase the physical strength of the MIMCAP. Also included is a spiral shaped capacitor electrode which lends itself to modular design by offering a wide range of discrete capacitive values easily specified by the circuit designer.