发明申请
- 专利标题： Methods and apparatus for incorporating nitrogen in oxide films
- 专利标题（中）： 在氮氧化物膜中掺入氮的方法和装置
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申请号： US11446444申请日： 2006-06-02
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公开(公告)号： US20070111458A1公开(公告)日： 2007-05-17
- 发明人: Tatsuya Sato , Patricia Liu , Fanos Christodoulou
- 申请人： Tatsuya Sato , Patricia Liu , Fanos Christodoulou
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
In a first aspect, a first method is provided. The first method includes the steps of (1) preconditioning a process chamber with an aggressive plasma; (2) loading a substrate into the process chamber; and (3) performing plasma nitridation on the substrate within the process chamber. The process chamber is preconditioned using a plasma power that is at least 150% higher than a plasma power used during plasma nitridation of the substrate. Numerous other aspects are provided.
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