发明申请
- 专利标题： Method of fabricating a silicon nitride stack
- 专利标题（中）： 制造氮化硅叠层的方法
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申请号： US11273380申请日： 2005-11-12
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公开(公告)号： US20070111538A1公开(公告)日： 2007-05-17
- 发明人: R. Iyer , Sanjeev Tandon , Kangzhan Zhang , Rubi Lapena , Yuji Maeda
- 申请人： R. Iyer , Sanjeev Tandon , Kangzhan Zhang , Rubi Lapena , Yuji Maeda
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
Embodiments of methods for fabricating a silicon nitride stack on a semiconductor substrate are provided herein. In one embodiment, a method for fabricating a silicon nitride stack on a semiconductor substrate includes depositing a base layer comprising silicon nitride on the substrate using a first set of process conditions that selectively control the stress of the base layer; and depositing an upper layer comprising silicon nitride using a second set of process conditions that selectively control at least one of an oxidation resistance and a refractive index of the upper layer.
公开/授权文献
- US07465669B2 Method of fabricating a silicon nitride stack 公开/授权日：2008-12-16
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