发明申请
- 专利标题： Method of increasing a free carrier concentration in a semiconductor substrate
- 专利标题（中）： 增加半导体衬底中自由载流子浓度的方法
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申请号： US11655916申请日： 2007-01-22
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公开(公告)号： US20070117250A1公开(公告)日： 2007-05-24
- 发明人: Gyoung Buh , Ji-Sang Yahng , Yu Shin , Guk-Hyon Yon , Sangjin Hyun
- 申请人： Gyoung Buh , Ji-Sang Yahng , Yu Shin , Guk-Hyon Yon , Sangjin Hyun
- 申请人地址： KR Suwon-si
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR2003-65686 20030922
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A method of selectively heating a predetermined region of a semiconductor substrate includes providing a semiconductor substrate, selectively focusing a free carrier generation light on only a predetermined region of the semiconductor substrate, irradiating the free carrier generation light on the predetermined region of the semiconductor substrate to increase a free carrier concentration within the predetermined region of the semiconductor substrate, wherein the free carrier generation light causes the predetermined region to increase in temperature by less than a temperature necessary to change the solid phase of the predetermined region, and irradiating the semiconductor substrate with a heating light to selectively heat the predetermined region of the semiconductor substrate.
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