发明申请
US20070120190A1 Electrostatic discharge (ESD) protection structure and a circuit using the same
有权
静电放电（ESD）保护结构和使用其的电路
- 专利标题： Electrostatic discharge (ESD) protection structure and a circuit using the same
- 专利标题（中）： 静电放电（ESD）保护结构和使用其的电路
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申请号： US11254387申请日： 2005-10-20
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公开(公告)号： US20070120190A1公开(公告)日： 2007-05-31
- 发明人: Stefan Schwantes , Michael Graf , Volker Dudek , Gayle Miller , Irwin Rathbun , Peter Grombach , Manfred Klaussner
- 申请人： Stefan Schwantes , Michael Graf , Volker Dudek , Gayle Miller , Irwin Rathbun , Peter Grombach , Manfred Klaussner
- 专利权人： Atmel Corporation
- 当前专利权人： Atmel Corporation
- 主分类号： H01L23/62
- IPC分类号： H01L23/62
摘要：
An electrostatic discharge (ESD) protection structure is disclosed. The ESD protection structure comprises an active device. The active device includes a plurality of drains. Each of the drains has a contact row and at least one body contact row. The at least one body contact row is located on the active device in a manner to reduce the amount of voltage required for triggering the ESD protection structure. A system and method in accordance with the present invention utilizes a LDNMOS transistor as ESD protection element with optimised substrate contacts. The ratio of substrate contact rows to drain contact rows is smaller than one in order to reduce the triggering voltage of the inherent bipolar transistor.