发明申请
US20070123010A1 TECHNIQUE FOR REDUCING CRYSTAL DEFECTS IN STRAINED TRANSISTORS BY TILTED PREAMORPHIZATION
审中-公开
通过倾斜预处理减少应变晶体管中的晶体缺陷的技术
- 专利标题： TECHNIQUE FOR REDUCING CRYSTAL DEFECTS IN STRAINED TRANSISTORS BY TILTED PREAMORPHIZATION
- 专利标题（中）： 通过倾斜预处理减少应变晶体管中的晶体缺陷的技术
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申请号： US11530722申请日： 2006-09-11
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公开(公告)号： US20070123010A1公开(公告)日： 2007-05-31
- 发明人: Jan Hoentschel , Andy Wei , Mario Heinze , Peter Javorka
- 申请人： Jan Hoentschel , Andy Wei , Mario Heinze , Peter Javorka
- 优先权： DE102005057074.7 20051130
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/20
摘要：
By performing a tilted amorphization implantation and a subsequent re-crystallization on the basis of a stressed overlying material, a highly efficient strain-inducing mechanism is provided. The tilted amorphization implantation may result in a significantly reduced defect rate during the re-crystallization process, thereby substantially reducing leakage currents in sophisticated transistor elements.
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