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发明申请
US20070123022A1 Semiconductor device manufacturing method 审中-公开
半导体器件制造方法

Semiconductor device manufacturing method
摘要：
There is prepared a semiconductor construction in which a plurality of columnar electrodes are provided on an upper side of a semiconductor substrate and in which a sealing film is provided on the semiconductor substrate to cover outer peripheral surfaces of the columnar electrodes. Upper sides of the columnar electrodes are removed to form openings in the sealing film on the supper sides of the columnar electrodes. Adhesive coatings are formed on upper surfaces of the columnar electrodes in the openings of the sealing film, Solder balls are provided on upper surfaces of the adhesive coatings. Finally, the solder balls are deformed by a heat treatment to form solder bumps in and above the openings of the sealing film so that the solder bumps are connected to the upper surfaces of the columnar electrodes. Thus, a semiconductor device is manufactured.
摘要（中）：

制备半导体结构，其中多个柱状电极设置在半导体衬底的上侧，并且其中密封膜设置在半导体衬底上以覆盖柱状电极的外周表面。 柱状电极的上侧被去除，以在柱状电极的旁边的密封膜中形成开口。 粘合剂涂层形成在密封膜的开口中的柱状电极的上表面上，焊球设置在粘合剂涂层的上表面上。 最后，通过热处理使焊球变形，以在密封膜的开口内和上方形成焊料凸块，使得焊料凸块连接到柱状电极的上表面。 因此，制造半导体器件。

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