发明申请
- 专利标题: Controlling the thickness of wafers during the electroplating process
- 专利标题(中): 控制电镀过程中晶圆的厚度
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申请号: US11292606申请日: 2005-12-01
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公开(公告)号: US20070125656A1公开(公告)日: 2007-06-07
- 发明人: Wai Fu , Hieu Lam , Shahram Mehdizadeh , Yeak-Chong Wong
- 申请人: Wai Fu , Hieu Lam , Shahram Mehdizadeh , Yeak-Chong Wong
- 主分类号: C25D21/12
- IPC分类号: C25D21/12
摘要:
Embodiments of the present invention pertain to controlling thickness of wafers during electroplating process. Information pertaining to an old current used during an electroplating process of a previous wafer is received. Information pertaining to the thickness of the previous wafer is received. A new current is automatically determined. The new current is to be used during an electroplating process for a new wafer. The new current is determined based on the information pertaining to the old current and the information pertaining to the thickness of the previous wafer.