- 专利标题: SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
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申请号: US11673299申请日: 2007-02-09
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公开(公告)号: US20070128356A1公开(公告)日: 2007-06-07
- 发明人: Yuji Matsuyama , Takahiro Kitano , Masatoshi Deguchi , Kousuke Yoshihara , Naruaki Iida
- 申请人: Yuji Matsuyama , Takahiro Kitano , Masatoshi Deguchi , Kousuke Yoshihara , Naruaki Iida
- 申请人地址: JP Minato-ku
- 专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人地址: JP Minato-ku
- 优先权: JP2000-024221 20000201; JP2000-038509 20000216; JP2000-133304 20000502; JP2000-137509 20000510
- 主分类号: B05D3/12
- IPC分类号: B05D3/12 ; B05D1/40
摘要:
On top of respective areas divided by partition plates, that is, a cassette station, a processing station, and an interface section in a coating and developing processing system, gas supply sections for supplying an inert gas into the respective areas are provided. Exhaust pipes for exhausting atmospheres in the respective areas are provided at the bottom of the respective areas. The atmospheres in the respective areas are maintained in a clean condition by supplying the inert gas not containing impurities such as oxygen and fine particles from the respective gas supply sections into the respective areas and exhausting the atmospheres in the respective areas from the exhaust pipes.