发明申请
- 专利标题: Methods of Fabricating Semiconductor Devices with a Source/Drain Formed on a Recessed Portion of an Isolation Layer
- 专利标题(中): 在隔离层的凹陷部分上形成源极/漏极的半导体器件的制造方法
-
申请号: US11673198申请日: 2007-02-09
-
公开(公告)号: US20070128789A1公开(公告)日: 2007-06-07
- 发明人: Hoon Lim , Soon-Moon Jung , Won-Seok Cho
- 申请人: Hoon Lim , Soon-Moon Jung , Won-Seok Cho
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 优先权: KR10-2003-0081078 20031117
- 主分类号: H01L21/8238
- IPC分类号: H01L21/8238
摘要:
Semiconductor devices and methods of fabricating semiconductor devices that include a substrate and a device isolation layer in the substrate that defines an active region of the substrate are provided. The device isolation layer has a vertically protruding portion having a sidewall that extends vertically beyond a surface of the substrate. An epitaxial layer is provided on the surface of the substrate in the active region and extends onto the device isolation layer. The epitaxial layer is spaced apart from the sidewall of the vertically protruding portion of the device isolation layer. A gate pattern is provided on the epitaxial layer and source/drain regions are provided in the epitaxial layer at opposite sides of the gate pattern.