发明申请
US20070133132A1 Magnetoresitive sensor having magnetic layers with tailored magnetic anisotropy induced by direct ion milling
失效
具有由直接离子研磨引起的具有定制的磁各向异性的磁性层的磁敏传感器
- 专利标题: Magnetoresitive sensor having magnetic layers with tailored magnetic anisotropy induced by direct ion milling
- 专利标题(中): 具有由直接离子研磨引起的具有定制的磁各向异性的磁性层的磁敏传感器
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申请号: US11304033申请日: 2005-12-14
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公开(公告)号: US20070133132A1公开(公告)日: 2007-06-14
- 发明人: Matthew Carey , Jeffrey Childress , Stefan Maat
- 申请人: Matthew Carey , Jeffrey Childress , Stefan Maat
- 专利权人: HITACHI GLOBAL STORAGE TECHNOLOGIES
- 当前专利权人: HITACHI GLOBAL STORAGE TECHNOLOGIES
- 主分类号: G11B5/33
- IPC分类号: G11B5/33 ; G11B5/127
摘要:
A magnetoresistive sensor having a magnetic anisotropy induced in one or both of the free layer and/or pinned layer. The magnetic anisotropy is induced by a surface texture formed in the surface of the magnetic layer of either or both of the free layer or pinned layer. The surface texture is formed by a direct, angled ion mill performed on the surface of the magnetic layer while holding the wafer on a stationary chuck. By applying this ion milling technique, the magnetic anisotropy of the pinned layer can be formed in a first direction (eg. perpendicular to the ABS) while the magnetic anisotropy of the free layer can be formed perpendicular to that of the pinned layer (eg. parallel to the ABS).
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