发明申请
US20070133260A1 Semiconductor memory device with memory cells operated by boosted voltage
有权
具有由升压电压工作的存储单元的半导体存储器件
- 专利标题: Semiconductor memory device with memory cells operated by boosted voltage
- 专利标题(中): 具有由升压电压工作的存储单元的半导体存储器件
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申请号: US11657026申请日: 2007-01-24
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公开(公告)号: US20070133260A1公开(公告)日: 2007-06-14
- 发明人: Masanao Yamaoka , Kenichi Osada , Koichiro Ishibashi
- 申请人: Masanao Yamaoka , Kenichi Osada , Koichiro Ishibashi
- 优先权: JP2001-176453 20010612
- 主分类号: G11C11/00
- IPC分类号: G11C11/00
摘要:
A memory using an SRAM memory cell intended for low-voltage operation is designed to decrease the threshold value of MOS transistors constituting the memory cell without substantial decrease in the static noise margin, which is the operational margin of the memory cell. To this end, a voltage Vdd′ higher than a power supply voltage Vdd of a power supply line for peripheral circuits is supplied from a power supply line for memory cells as a power supply voltage for memory cells. Since the conductance of driver MOS transistors is in-creased, the threshold voltage of the MOS transistors within the memory cells can be reduced without reducing the static noise margin. Further the ratio of width between the driver MOS transistor and a transfer MOS transistor can be set to 1, thereby allowing a reduction in the memory cell area.