发明申请
- 专利标题： Nitride semiconductor light emitting device and method of fabricating nitride semiconductor laser device
- 专利标题（中）： 氮化物半导体发光器件及其制造方法
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申请号： US11638581申请日： 2006-12-14
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公开(公告)号： US20070138491A1公开(公告)日： 2007-06-21
- 发明人: Yoshinobu Kawaguchi , Takeshi Kamikawa
- 申请人： Yoshinobu Kawaguchi , Takeshi Kamikawa
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 优先权： JP2005-363589(P) 20051216
- 主分类号： H01L33/00
- IPC分类号： H01L33/00
摘要：
There is provided a nitride semiconductor light emitting device having a light emitting portion coated with a coating film, the light emitting portion being formed of a nitride semiconductor, the coating film in contact with the light emitting portion being formed of an oxynitride film deposited adjacent to the light emitting portion and an oxide film deposited on the oxynitride film. There is also provided a method of fabricating a nitride semiconductor laser device having a cavity with a facet coated with a coating film, including the steps of: providing cleavage to form the facet of the cavity; and coating the facet of the cavity with a coating film formed of an oxynitride film deposited adjacent to the facet of the cavity and an oxide film deposited on the oxynitride film.
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