发明申请
US20070138588A1 Backlit Photodiode and Method of Manufacturing a Backlit Photodiode
有权
背光光电二极管及制造背光光电二极管的方法
- 专利标题: Backlit Photodiode and Method of Manufacturing a Backlit Photodiode
- 专利标题(中): 背光光电二极管及制造背光光电二极管的方法
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申请号: US11609934申请日: 2006-12-13
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公开(公告)号: US20070138588A1公开(公告)日: 2007-06-21
- 发明人: Robin Wilson , Conor Brogan , Hugh Griffin , Cormac MacNamara
- 申请人: Robin Wilson , Conor Brogan , Hugh Griffin , Cormac MacNamara
- 申请人地址: US AZ Tempe
- 专利权人: Icemos Technology Corporation
- 当前专利权人: Icemos Technology Corporation
- 当前专利权人地址: US AZ Tempe
- 主分类号: H01L31/00
- IPC分类号: H01L31/00 ; H01L21/00
摘要:
A backlit photodiode array includes a semiconductor substrate having first and second main surfaces opposite to each other. A first dielectric layer is formed on the first main surface. First and second conductive vias are formed extending from the second main surface through the semiconductor substrate and the first dielectric layer. The first and second conductive vias are isolated from the semiconductor substrate by a second dielectric material. A first anode/cathode layer of a first conductivity is formed on the first dielectric layer and is electrically coupled to the first conductive via. An intrinsic semiconductor layer is formed on the first anode/cathode layer. A second anode/cathode layer of a second conductivity opposite to the first conductivity is formed on the intrinsic semiconductor layer and is electrically coupled to the second conductive via.
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