发明申请
- 专利标题: Carbon nanotube energy well (CNEW) field effect transistor
- 专利标题(中): 碳纳米管能量阱(CNEW)场效应晶体管
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申请号: US11638333申请日: 2006-12-12
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公开(公告)号: US20070141790A1公开(公告)日: 2007-06-21
- 发明人: Suman Datta , Marko Radosavljevic , Brian Doyle , Jack Kavalieros , Justin Brask , Amlan Majumdar , Robert Chau
- 申请人: Suman Datta , Marko Radosavljevic , Brian Doyle , Jack Kavalieros , Justin Brask , Amlan Majumdar , Robert Chau
- 主分类号: H01L21/336
- IPC分类号: H01L21/336
摘要:
A structure to form an energy well within a Carbon nanotube is described. The structure includes a doped semiconductor region and an undoped semiconductor region. The Carbon nanotube is between the doped semiconductor region and the undoped semiconductor region. The structure also includes a delta doped semiconductor region. The undoped semiconductor region is between the Carbon nanotube and the delta doped region. The delta doped semiconductor region is doped opposite that of the doped semiconductor region.
公开/授权文献
- US07427541B2 Carbon nanotube energy well (CNEW) field effect transistor 公开/授权日:2008-09-23