- 专利标题: Multi-layered structure forming method, method of manufacturing wiring substrate, and method of manufacturing electronic apparatus
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申请号: US11707022申请日: 2007-02-16
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公开(公告)号: US20070141828A1公开(公告)日: 2007-06-21
- 发明人: Tsuyoshi Shintate , Toshiaki Mikoshiba , Kenji Wada , Kazuaki Sakurada , Jun Yamada
- 申请人: Tsuyoshi Shintate , Toshiaki Mikoshiba , Kenji Wada , Kazuaki Sakurada , Jun Yamada
- 申请人地址: JP Tokyo
- 专利权人: Seiko Epson Corporation
- 当前专利权人: Seiko Epson Corporation
- 当前专利权人地址: JP Tokyo
- 优先权: JP2004-240939 20040820; JP2004-278994 20040927; JP2005-182752 20050623
- 主分类号: H01L21/4763
- IPC分类号: H01L21/4763
摘要:
There is provided a multi-layered structure forming method comprising: (A) forming a first insulating material layer containing a first photo-curing material on a substrate; (B) semi-hardening the first insulating material layer by radiating light having a first wavelength to the first insulating material layer; (C) forming a conductive material layer on the semi-hardened first insulating material layer by ejecting droplets of a conductive material to the semi-hardened first insulating material layer from a nozzle of a liquid droplet ejecting apparatus; (D) forming a second insulating material layer containing a second photo-curing material so as to cover the semi-hardened first insulating material layer and the conductive material layer; and (E) forming a first insulating layer, a conductive layer positioned on the first insulating material, and a second insulating layer covering the first insulating layer and the conductive layer by simultaneously heating the first insulating material layer, the conductive material layer, and the second insulating material layer.
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