发明申请
- 专利标题: Semiconductor Device
- 专利标题(中): 半导体器件
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申请号: US11467793申请日: 2006-08-28
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公开(公告)号: US20070147160A1公开(公告)日: 2007-06-28
- 发明人: Satoru Hanzawa , Tomonori Sekiguchi , Riichiro Takemura , Satoru Akiyama , Kazuhiko Kajigaya
- 申请人: Satoru Hanzawa , Tomonori Sekiguchi , Riichiro Takemura , Satoru Akiyama , Kazuhiko Kajigaya
- 专利权人: Hitachi, Ltd.,Elpida Memory, Inc.
- 当前专利权人: Hitachi, Ltd.,Elpida Memory, Inc.
- 优先权: JP2005-378490 20051228
- 主分类号: G11C8/00
- IPC分类号: G11C8/00
摘要:
A column circuit that amplifies signals read from a sense amplifier array SAA to local input/output lines LIO in sub-amplifiers SAMP to transfer the amplified signals to main input/output lines MIO is provided. A current control circuit IC that can set one of two kinds of currents according to read enable signals RD1, RD2 is provided in each sub-amplifier SAMP. The read enable signals RD1, RD2 are generated at timings corresponding to the number of cycles in burst read operation under control of the timing controller. Current in the current control circuit IC is set to be large by the RD1 in burst read operation cycle just after activation of a memory bank, while current in the current control circuit IC is set to be small by the RD2 in the next and subsequent burst read cycles. Accordingly, expansion of an operation margin or reduction of power consumption can be realized in a semiconductor device including a semiconductor memory such as a DRAM.
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