发明申请
- 专利标题： Semiconductor piezoresistive sensor and operation method thereof
- 专利标题（中）： 半导体压阻传感器及其操作方法
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申请号： US11643661申请日： 2006-12-22
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公开(公告)号： US20070148788A1公开(公告)日： 2007-06-28
- 发明人: Hsieh-Shen Hsieh , Heng-Chung Chang , Cheng-Chang Lee , Chao-Jui Liang , Huang-Kun Chen , Tai-Kang Shing
- 申请人： Hsieh-Shen Hsieh , Heng-Chung Chang , Cheng-Chang Lee , Chao-Jui Liang , Huang-Kun Chen , Tai-Kang Shing
- 申请人地址： TW Taoyuan Hsien
- 专利权人： DELTA ELECTRONICS, INC.
- 当前专利权人： DELTA ELECTRONICS, INC.
- 当前专利权人地址： TW Taoyuan Hsien
- 优先权： TW094145987 20051223
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; G01L19/04
摘要：
A semiconductor piezoresistive sensor, which is electrically connected with a circuit, includes a semiconductor base, at least one piezoresistive element and a conductive layer. The semiconductor base includes a diaphragm and a base. The base is disposed adjacent to and around the diaphragm. The piezoresistive element is formed in the diaphragm and is electrically connected with the circuit. The conductive layer is electrically connected with the diaphragm.
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