发明申请
US20070148896A1 MEMORY WITH MEMORY CELLS THAT INCLUDE A MIM TYPE CAPACITOR WITH A LOWER ELECTRODE MADE FOR REDUCED RESISTANCE AT AN INTERFACE WITH A METAL FILM
审中-公开
具有存储器电池的存储器，其包括具有用于在具有金属膜的接口下具有降低电阻的较低电极的MIM型电容器
- 专利标题： MEMORY WITH MEMORY CELLS THAT INCLUDE A MIM TYPE CAPACITOR WITH A LOWER ELECTRODE MADE FOR REDUCED RESISTANCE AT AN INTERFACE WITH A METAL FILM
- 专利标题（中）： 具有存储器电池的存储器，其包括具有用于在具有金属膜的接口下具有降低电阻的较低电极的MIM型电容器
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申请号： US11563442申请日： 2006-11-27
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公开(公告)号： US20070148896A1公开(公告)日： 2007-06-28
- 发明人: Yoshitaka Nakamura , Hidekazu Goto , Isamu Asano , Mitsuhiro Horikawa , Keiji Kuroki , Hiroshi Sakuma , Kenichi Koyanagi , Tsuyoshi Kawagoe
- 申请人： Yoshitaka Nakamura , Hidekazu Goto , Isamu Asano , Mitsuhiro Horikawa , Keiji Kuroki , Hiroshi Sakuma , Kenichi Koyanagi , Tsuyoshi Kawagoe
- 专利权人： ELPIDA MEMORY, INC,Hitachi ULSI Systems, Co., Ltd.,HITACHI, LTD.
- 当前专利权人： ELPIDA MEMORY, INC,Hitachi ULSI Systems, Co., Ltd.,HITACHI, LTD.
- 优先权： JP36459/2003 20030214
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A semiconductor device includes memory cells each having an MISFET for memory selection formed on one major surface of a semiconductor substrate and a capacitive element comprised of a lower electrode electrically connected at a bottom portion to one of a source and drain of the MISFET for memory selection via a first metal layer and an upper electrode formed on the lower electrode via a capacitive insulating film. The lower electrode has a thickness of 30 nm or greater at the bottom portion thereof. Sputtering with a high ionization ratio and high directivity, such as PCM, is adapted to the formation of the lower electrode to make only the bottom portion of a capacitor thicker.