发明申请
US20070148939A1 Low leakage heterojunction vertical transistors and high performance devices thereof
审中-公开
低漏极异质结垂直晶体管及其高性能器件
- 专利标题: Low leakage heterojunction vertical transistors and high performance devices thereof
- 专利标题(中): 低漏极异质结垂直晶体管及其高性能器件
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申请号: US11317285申请日: 2005-12-22
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公开(公告)号: US20070148939A1公开(公告)日: 2007-06-28
- 发明人: Jack Chu , Qiqing Ouyang
- 申请人: Jack Chu , Qiqing Ouyang
- 申请人地址: US NY ARMONK
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY ARMONK
- 主分类号: H01L21/3205
- IPC分类号: H01L21/3205
摘要:
A method for forming and the structure of a vertical channel of a field effect transistor, a field effect transistor and CMOS circuitry are described incorporating a drain, body and source region on a sidewall of a vertical single crystal semiconductor structure wherein a hetero-junction is formed between the source and body of the transistor, wherein the source region and channel are independently lattice strained with respect the body region and wherein the drain region contains a carbon doped region to prevent the diffusion of dopants (i.e., B and P) into the body. The invention reduces the problem of short channel effects such as drain induced barrier lowering and the leakage current from the source to drain regions via the hetero-junction and while independently permitting lattice strain in the channel region for increased mobility via choice of the semiconductor materials. The problem of scalability of the gate length below 100 nm is overcome by the heterojunction between the source and body regions.