发明申请
摘要：
A method for manufacturing an interconnection of a semiconductor device is provided. The method can include the steps of: forming an interlayer dielectric layer on a semiconductor substrate; forming a damascene pattern on the interlayer dielectric layer; depositing a seed layer on the interlayer dielectric layer; depositing a metal layer on the seed layer; depositing a copper layer on the metal layer for forming a copper interconnection; and performing a heat treatment process such that the metal layer reacts with the copper layer to produce an alloy layer including copper.
信息查询
IPC分类:
