发明申请
US20070151947A1 Method for setting plasma chamber having an adaptive plasma source, plasma etching method using the same and manufacturing method for adaptive plasma source
审中-公开
用于设置具有自适应等离子体源的等离子体室的方法，使用其的等离子体蚀刻方法和用于自适应等离子体源的制造方法
- 专利标题： Method for setting plasma chamber having an adaptive plasma source, plasma etching method using the same and manufacturing method for adaptive plasma source
- 专利标题（中）： 用于设置具有自适应等离子体源的等离子体室的方法，使用其的等离子体蚀刻方法和用于自适应等离子体源的制造方法
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申请号： US10583976申请日： 2004-12-22
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公开(公告)号： US20070151947A1公开(公告)日： 2007-07-05
- 发明人: Yeong Song , Sang Ryong Oh , Sheung Kim , Nam Kim , Young Oh , Do Hyung Lee
- 申请人： Yeong Song , Sang Ryong Oh , Sheung Kim , Nam Kim , Young Oh , Do Hyung Lee
- 优先权： KR10-2003-0094413 20031222; KR10-2003-0095570 20031223; KR10-2003-0095523 20031223
- 国际申请： PCT/KR04/03388 WO 20041222
- 主分类号： C23F1/00
- IPC分类号： C23F1/00 ; H01L21/302 ; C03C15/00
摘要：
Disclosed herein is a plasma chamber setting method for generating plasma in a plasma chamber. A plurality of plasma source coils, including a first plasma source coil, a second plasma source coil having an etching rate at the center part thereof higher than that of the first plasma source coil, and a third plasma source coil having an etching rate at the edge part thereof higher than that of the first plasma source coil, are prepared. The first plasma source coil is disposed on the plasma chamber, and a test wafer is etched. The etching rate for each position of the test wafer is analyzed, and first plasma source coil is replaced with the second plasma source coil or the third plasma source coil based on the analysis results.
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