A surface emitting semiconductor component (1) with an emission direction is disclosed, which comprises a semiconductor body (2). The semiconductor body comprises a plurality of active regions (4a, 4b) which are suitable for the generation of radiation and are spaced apart from one another, wherein between two active regions a tunnel junction (5) is monolithically integrated in the semiconductor body. The two active regions are electrically conductively connected by means of the tunnel junction, and the semiconductor component is provided for operation with an external resonator. A laser device comprising a semiconductor component of this type and an external resonator is also disclosed.