发明申请
- 专利标题： Siloxane-based resin containing germanium and an interlayer insulating film for a semiconductor device using the same
- 专利标题（中）： 包含锗的硅氧烷基树脂和使用其的半导体器件的层间绝缘膜
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申请号： US11710487申请日： 2007-02-26
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公开(公告)号： US20070154725A1公开(公告)日： 2007-07-05
- 发明人: Sang Lee , Jong Seon
- 申请人： Sang Lee , Jong Seon
- 优先权： KR2003-47731 20030714
- 主分类号： B32B27/00
- IPC分类号： B32B27/00 ; B05D3/02 ; C08L83/04 ; C08G77/04
摘要：
A siloxane-based resin having germanium and an interlayer insulating, film for a semiconductor device formed using the same. The siloxane-based resins have a low dielectric constant in addition to excellent mechanical properties so that they are useful materials for an insulating film between interconnecting layers of a semiconductor device.
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