发明申请
- 专利标题： TRENCH MEMORY
- 专利标题（中）： TRENCH记忆
-
申请号： US11306669申请日： 2006-01-06
-
公开(公告)号： US20070158724A1公开(公告)日： 2007-07-12
- 发明人: Kangguo Cheng , Geng Wang
- 申请人： Kangguo Cheng , Geng Wang
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/94
- IPC分类号： H01L29/94
摘要：
A trench device and method for fabricating same are provided. The trench device has a collar with a first portion that is doped and a second portion that is undoped. Fabrication of the partially doped collar can be done by deposition of a doped insulator in the trench, removal of a portion of the doped deposition, deposition of an undoped insulator in the trench and removal of a portion of the doped and undoped insulators.
公开/授权文献
- US07326986B2 Trench memory 公开/授权日：2008-02-05
信息查询
IPC分类:
