发明申请
US20070158743A1 Thin silicon single diffusion field effect transistor for enhanced drive performance with stress film liners
审中-公开
薄硅单扩散场效应晶体管，用于增强应力薄膜衬垫的驱动性能
- 专利标题： Thin silicon single diffusion field effect transistor for enhanced drive performance with stress film liners
- 专利标题（中）： 薄硅单扩散场效应晶体管，用于增强应力薄膜衬垫的驱动性能
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申请号： US11329490申请日： 2006-01-11
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公开(公告)号： US20070158743A1公开(公告)日： 2007-07-12
- 发明人: Leland Chang , David Fried , John Hergenrother , Ghavam Shahidi , Jeffrey Sleight
- 申请人： Leland Chang , David Fried , John Hergenrother , Ghavam Shahidi , Jeffrey Sleight
- 申请人地址： US NY ARMONK
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY ARMONK
- 主分类号： H01L27/12
- IPC分类号： H01L27/12
摘要：
The present invention provides a semiconducting device structure including a thin SOI region, wherein the SOI device is formed with an optional single thin diffusion, i.e., offset, spacer and a single diffusion implant. The device silicon thickness is thin enough to permit the diffusion implants to abut the buried insulator but thick enough to form a contacting silicide. Stress layer liner films are used both over nFET and pFET device regions to enhance performance.