发明申请
- 专利标题： Ohmic electrode structure of nitride semiconductor device
- 专利标题（中）： 氮化物半导体器件的欧姆电极结构
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申请号： US10590730申请日： 2005-02-28
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公开(公告)号： US20070164305A1公开(公告)日： 2007-07-19
- 发明人: Tatsuo Nakayama , Yuji Ando , Hironobu Miyamoto , Masaaki Kuzuhara , Yasuhiro Okamoto , Takashi Inoue , Koji Hataya
- 申请人： Tatsuo Nakayama , Yuji Ando , Hironobu Miyamoto , Masaaki Kuzuhara , Yasuhiro Okamoto , Takashi Inoue , Koji Hataya
- 优先权： JP2004-050798 20040226
- 国际申请： PCT/JP05/03802 WO 20050228
- 主分类号： H01L33/00
- IPC分类号： H01L33/00
摘要：
An ohmic electrode structure of a nitride semiconductor device having a nitride semiconductor. The ohmic electrode structure is provided with a first metal film formed on the nitride semiconductor and a second metal film formed on the first metal film. The first metal film is composed of at least one material selected from a group consisting of V, Mo, Ti, Nb, W, Fe, Hf, Re, Ta and Zr. The second metal film is composed of at least one material different from that of the first metal film (102), selected from a group consisting of V, Mo, Ti, Nb, W, Fe, Hf, Re, Ta, Zr, Pt and Au.
公开/授权文献
- US07459788B2 Ohmic electrode structure of nitride semiconductor device 公开/授权日：2008-12-02
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