发明申请
- 专利标题： METHOD FOR FABRICATING LAST LEVEL COPPER-TO-C4 CONNECTION WITH INTERFACIAL CAP STRUCTURE
- 专利标题（中）： 用于制作最终级铜对C4连接的方法
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申请号： US11306983申请日： 2006-01-18
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公开(公告)号： US20070166992A1公开(公告)日： 2007-07-19
- 发明人: Timothy H. Daubenspeck , William F. Landers , Donna S. Zupanski-Nielsen
- 申请人： Timothy H. Daubenspeck , William F. Landers , Donna S. Zupanski-Nielsen
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
The present invention relates to a method for fabricating a semiconductor device with a last level copper-to-C4 connection that is essentially free of aluminum. Specifically, the last level copper-to-C4 connection comprises an interfacial cap structure containing CoWP, NiMoP, NiMoB, NiReP, NiWP, and combinations thereof. Preferably, the interfacial cap structure comprises at least one CoWP layer. Such a CoWP layer can be readily formed over a last level copper interconnect by a selective electroless plating process.