发明申请
- 专利标题: Pattern forming method
- 专利标题(中): 图案形成方法
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申请号: US11656527申请日: 2007-01-23
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公开(公告)号: US20070172769A1公开(公告)日: 2007-07-26
- 发明人: Shinichi Kanna , Haruki Inabe , Hiromi Kanda
- 申请人: Shinichi Kanna , Haruki Inabe , Hiromi Kanda
- 申请人地址: JP Tokyo
- 专利权人: FUJIFILM Corporation
- 当前专利权人: FUJIFILM Corporation
- 当前专利权人地址: JP Tokyo
- 优先权: JP2006-013978 20060123; JP2006-157227 20060606
- 主分类号: G03C5/00
- IPC分类号: G03C5/00
摘要:
A pattern forming method which uses a positive resist composition comprises: (A) a fluorine-free resin capable of increasing its solubility in an alkaline developer under action of an acid; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a fluorine-containing resin having at least one group selected from the group consisting of (X) an alkali-soluble group, (XI) a group capable of decomposing under action of an alkali developer and increasing solubility of the resin (C) in an alkaline developer and (XII) a group capable of decomposing under action of an acid and increasing solubility of the resin (C) in an alkaline developer; and (D) a solvent, the method comprising: (i) a step of applying the positive resist composition to a substrate to form a resist coating; (ii) a step of exposing the resist coating to light via an immersion liquid; (iii) a step of removing the immersion liquid remaining on the resist coating; (iv) a step of heating the resist coating; and (v) a step of developing the resist coating.
公开/授权文献
- US07700260B2 Pattern forming method 公开/授权日:2010-04-20
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