发明申请
- 专利标题: Method of manufacturing field emission device
- 专利标题(中): 场致发射装置的制造方法
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申请号: US11604731申请日: 2006-11-28
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公开(公告)号: US20070176206A1公开(公告)日: 2007-08-02
- 发明人: Jun-Hee Choi , Ho-Suk Kang , Chan-Wook Baik , Ha-Jong Kim
- 申请人: Jun-Hee Choi , Ho-Suk Kang , Chan-Wook Baik , Ha-Jong Kim
- 优先权: KR10-2006-0010057 20060202
- 主分类号: H01L31/00
- IPC分类号: H01L31/00
摘要:
A method of manufacturing a field emission device (FED), which reduces the number of photomask patterning processes and improves the manufacturing yield of the FED, is provided. The method includes steps of sequentially forming a cathode layer, a first insulating layer, and a gate layer on a substrate, forming a protection layer on the gate electrode layer, etching portions of the protection layer and gate electrode to form a plurality of first opening holes where portions of the first insulating layer being exposed through the first opening holes, forming a second insulating layer on the protection layer and on the first opening holes, forming a focus electrode layer on the second insulating layer, forming a photoresist layer on the focus electrode layer, etching a portion of the photoresist layer and a portion of the focus electrode layer to form a second opening hole where a portion of the second insulating layer being exposed through the second opening hole, and forming emitter holes exposing a portion of the cathode layer by etching the exposed surface of the second insulating layer to a bottom surface of the first insulating layer. After removing the photoresist layer electron emission emitters are formed on the cathode layer.
公开/授权文献
- US07517710B2 Method of manufacturing field emission device 公开/授权日:2009-04-14