利索-全球专利检索

  1. 登录
  2. 注册
发明申请
US20070176616A1 Semiconductor probe with high resolution resistive tip having doping control layer and method of fabricating the same 失效
具有掺杂控制层的高分辨率电阻尖端的半导体探针及其制造方法

Semiconductor probe with high resolution resistive tip having doping control layer and method of fabricating the same
摘要：
A semiconductor probe and a method of fabricating the same are provided. The semiconductor probe includes a cantilever doped with first impurities, a resistive tip which protrudes from an end of the cantilever and doped lightly with second impurities, doping control layers formed on both sides of a protruding portion of the resistive tip, and first and second electrode regions formed under the doping control layers and doped heavily with the second impurities.
摘要（中）：

提供半导体探针及其制造方法。 半导体探针包括掺杂有第一杂质的悬臂，从悬臂的端部突出并与第二杂质轻微掺杂的电阻尖端，形成在电阻尖端的突出部分两侧的掺杂控制层，以及第一和第二电极 形成在掺杂控制层下面并且与第二杂质大量掺杂的区域。

公开/授权文献
信息查询
Global Dossier Espacenet
0/0