发明申请
US20070178612A1 SEMICONDUCTOR WAFER WITH REAR SIDE IDENTIFICATION AND METHOD 有权
具有后面识别和方法的半导体波形

  • 专利标题: SEMICONDUCTOR WAFER WITH REAR SIDE IDENTIFICATION AND METHOD
  • 专利标题(中): 具有后面识别和方法的半导体波形
  • 申请号: US11622290
    申请日: 2007-01-11
  • 公开(公告)号: US20070178612A1
    公开(公告)日: 2007-08-02
  • 发明人: Stephan BradlRainer Holmer
  • 申请人: Stephan BradlRainer Holmer
  • 申请人地址: DE Muenchen 81669
  • 专利权人: INFINEON TECHNOLOGIES AG
  • 当前专利权人: INFINEON TECHNOLOGIES AG
  • 当前专利权人地址: DE Muenchen 81669
  • 优先权: DE102006001601.7 20060111; DE102003001601.7 20060111
  • 主分类号: H01L21/66
  • IPC分类号: H01L21/66
SEMICONDUCTOR WAFER WITH REAR SIDE IDENTIFICATION AND METHOD
摘要:
A semiconductor wafer with rear side identification and to a method for producing the same is disclosed. In one embodiment, the rear side identification has a multiplicity of information regarding the monocrystalline and surface and also rear side constitution. A multiplicity of semiconductor device positions arranged in rows and columns are provided on the top side of the semiconductor wafer, an information chip being arranged at an exposed semiconductor device position, the information chip having at least the information of the rear side identification.
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