发明申请
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US11657163申请日： 2007-01-24
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公开(公告)号： US20070178614A1公开(公告)日： 2007-08-02
- 发明人: Ryo Arasawa , Tomoyuki Iwabuchi
- 申请人： Ryo Arasawa , Tomoyuki Iwabuchi
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 优先权： JP2006-022074 20060131
- 主分类号： H01L21/66
- IPC分类号： H01L21/66
摘要：
An object of the invention is to manage variation of electrical characteristics of an element in a semiconductor device due to a vapor deposition process by measuring electrical characteristics of a TEG. A substrate 100 of an active matrix EL panel includes a vapor deposition region 101 having a film formed by a vapor deposition method. In the vapor deposition region 101, a pixel region 102 is provided. A TEG 109 is provided in the vapor deposition region 101 having a film formed in a vapor deposition step and outside of the pixel region 102. A measurement terminal portion 110 for measuring the TEG 109 is provided outside of a sealing region 103.
公开/授权文献
- US07479655B2 Semiconductor device 公开/授权日：2009-01-20
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