发明申请
- 专利标题: CRYSTALS FOR A SEMICONDUCTOR RADIATION DETECTOR AND METHOD FOR MAKING THE CRYSTALS
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申请号: US11734012申请日: 2007-04-11
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公开(公告)号: US20070181056A1公开(公告)日: 2007-08-09
- 发明人: Mark D'Evelyn , Dong-Sil Park , John Leman
- 申请人: Mark D'Evelyn , Dong-Sil Park , John Leman
- 申请人地址: US NY Schenectady 12345
- 专利权人: GENERAL ELECTRIC COMPANY
- 当前专利权人: GENERAL ELECTRIC COMPANY
- 当前专利权人地址: US NY Schenectady 12345
- 主分类号: C30B11/00
- IPC分类号: C30B11/00 ; C30B9/00 ; C30B17/00
摘要:
A method for a growing solid-state, spectrometer grade II-VI crystal using a high-pressure hydrothermal process including the following steps: positioning seed crystals in a growth zone of a reactor chamber; positioning crystal nutrient material in the nutrient zone of the chamber; filling the reactor with a solvent fluid; heating and pressuring the chamber until at least a portion of the nutrient material dissolves in the solvent and the solvent becomes supercritical in the nutrient zone; transporting supercritical from the nutrient zone to the growth zone, and growing the seed crystals as nutrients from the supercritical fluid deposit on the crystals.