发明申请
US20070183208A1 Nonvolatile semiconductor memory device and data writing method therefor
审中-公开
非易失性半导体存储器件及其数据写入方法
- 专利标题: Nonvolatile semiconductor memory device and data writing method therefor
- 专利标题(中): 非易失性半导体存储器件及其数据写入方法
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申请号: US11653278申请日: 2007-01-16
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公开(公告)号: US20070183208A1公开(公告)日: 2007-08-09
- 发明人: Masayuki Tanaka , Ryota Fujitsuka , Katsuyuki Sekine , Yoshio Ozawa , Daisuke Nishida
- 申请人: Masayuki Tanaka , Ryota Fujitsuka , Katsuyuki Sekine , Yoshio Ozawa , Daisuke Nishida
- 优先权: JP2006-009032 20060117
- 主分类号: G11C11/34
- IPC分类号: G11C11/34 ; G11C16/04 ; G11C16/06
摘要:
A plurality of memory cell transistors each of which has a gate structure having a floating gate electrode formed of a first conductive film and stacked on an element region surrounded by an element isolation region on a silicon substrate with a first insulating film disposed therebetween and a control gate electrode formed of a second conductive film and stacked on the first conductive film with a second insulating film with a large dielectric constant disposed therebetween are arranged in a memory cell array. A detrap pulse supply circuit generates and supplies a detrap pulse signal to the control gate electrode of the memory cell transistor to extract charges from the second insulating film after data is written into each of the memory cell transistors.
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