发明申请
US20070183208A1 Nonvolatile semiconductor memory device and data writing method therefor 审中-公开
非易失性半导体存储器件及其数据写入方法

Nonvolatile semiconductor memory device and data writing method therefor
摘要:
A plurality of memory cell transistors each of which has a gate structure having a floating gate electrode formed of a first conductive film and stacked on an element region surrounded by an element isolation region on a silicon substrate with a first insulating film disposed therebetween and a control gate electrode formed of a second conductive film and stacked on the first conductive film with a second insulating film with a large dielectric constant disposed therebetween are arranged in a memory cell array. A detrap pulse supply circuit generates and supplies a detrap pulse signal to the control gate electrode of the memory cell transistor to extract charges from the second insulating film after data is written into each of the memory cell transistors.
信息查询
0/0