A thin film transistor array panel is provided, which includes: a plurality of gate lines formed on a substrate and including a plurality of oblique portions and a plurality of gate electrodes; a first insulating layer on the gate line; a semiconductor layer formed on the first insulating layer; a plurality of data lines formed at least on the semiconductor layer and intersecting the gate lines to defined trapezoidal pixel areas; a plurality of drain electrodes separated from the data lines; a second insulating layer formed at least on portions of the semiconductor layer that are not covered with the data lines and the drain electrodes; a plurality of pixel electrodes formed on the second insulating layer and connected to the drain electrodes, at least two of the pixel electrodes disposed in each pixel area; and a plurality of common electrodes formed on the second insulating layer, arranged alternate to the pixel electrodes and connected to the drain electrodes, each common electrode having an edge spaced apart from an edge of the pixel electrodes and substantially parallel to the edge of the pixel electrodes.