Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US11611493Application Date: 2006-12-15
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Publication No.: US20070187798A1Publication Date: 2007-08-16
- Inventor: Satoshi RITTAKU , Kazuhiro Shimizu
- Applicant: Satoshi RITTAKU , Kazuhiro Shimizu
- Applicant Address: JP Chiyoda-ku
- Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee Address: JP Chiyoda-ku
- Priority: JP2006-037391 20060215
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/00
Abstract:
A semiconductor device including a high voltage element and a low voltage element, including: a semiconductor substrate having high voltage element region where the high voltage element is formed, and a low voltage element region where the low voltage element is formed; a first LOCOS isolation structure disposed in the high voltage element region; and a second LOCOS isolation structure disposed in the low voltage element region, wherein the first LOCOS isolation structure includes a LOCOS oxide film formed on a surface of the semiconductor substrate and a CVD oxide film formed on the LOCOS oxide film, and the second LOCOS isolation structure includes a LOCOS oxide film.
Public/Granted literature
- US08044487B2 Semiconductor device and method of manufacturing the same Public/Granted day:2011-10-25
Information query
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